Locate family members with the last name LEDENTSOV.

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NIKOLAI-N. LEDENTSOV is an academic who published a paper in 2011 entitled Decay dynamics of excitonic polarons in InAs/GaAs quantum dots. NIKOLAI-N. LEDENTSOV published this work as part of a team: Werner, Stefan. Here is a description of this work: This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Journal of Applied Physics 110, 074303 (2011) and may be found at https://doi.org/10.1063/1.3639310..

NIKOLAY LEDENTSOV is an academic who is affiliated with VI Systems GmbH, Hardenbergstr. 7, Berlin 10623, Germany and who published a paper in 2017 entitled Application of nanophotonics to the next generation of surface-emitting lasers.

NIKOLAY LEDENTSOV is an academic who published a paper in 2023 entitled Digital Non-Linear Transmitter Equalization for PAM-N-Based VCSEL Links Enabling Robust Data Transmi. NIKOLAY LEDENTSOV published this work as part of a team: Hecht, Urs. Here is a description of this work: Thi,, paper demonstrates why VCSEL-based transmitter systems are not able to capitalize on higher-order PAM modulation formats (such as PAM-4) to push the link data rate towards 100 Gbit/s with BER of better than 10âˆ'5. First, the non-linear and biasing-dependent VCSEL behavior is analyzed in great detail to prove why state-of-the-art VCSELs with linear equalization are not able to reach these bandwidth targets. Consequently, based on an enhanced VCSEL model, a digital non-linear transmit equalizer is proposed to overcome voltage-dependent relaxation frequency shifts as well as data-dependent VCSEL bandwidth variations. The proposed digital non-linear equalizer is compared with a standard linear FFE structure using PAM-4 transmission experiments of 100 Gbit/s and beyond. This way, the proposed non-linear equalizer reveals a BER im.

N.-N. LEDENTSOV is an academic who published a paper in 2020 entitled Design of electrically driven single photon source based on dielectric passive cavity structure at 1. N.-N. LEDENTSOV published this work as part of a team: Blokhin, S. A.. Here is a description of this work: A c,,mbination of advanced concepts is applied for designing micro-cavity structures aimed for single-photon sources with high photon-extraction efficiency in the telecom O-band at ~1. 3 μm. The device design consists of a broad stop-band bottom distributed Bragg reflector (DBR), a top DBR formed in a dielectric micropillar with additional circular Bragg grating and a central dielectric passive cavity. This combination of photonic elements is compatible with electric carrier injection and provides overall photon-extraction efficiency of ~83% as shown by 3D finite-difference time-domain simulations..

NN LEDENTSOV is an academic.