30. SASAN FATHPOUR
Information acquired: 2025
SASAN FATHPOUR is an academic who published a paper in 2000 entitled Performance predictions for A1GaN/GaN heterojunction bipolar transistors. SASAN FATHPOUR published this work as part of a team: Fathpour, Sasan. Here is a description of this work: Het,,rostructure transistors made from wide band-gap, wurtzite, nitride semiconductors are candidates for high-power, and high-temperature electronics. AlGaN/GaN heterojunction bipolar transistors (HBTs) have been studied since 1998, and the performance of fabricated devices has been improving steadily. However, the limits to the performance of these devices are not known. The main objective of this work is to achieve theoretical performance predictions for the characteristics of abrupt-emitter, and graded-emitter, n-p-n Al[sub x]Gaâ‚[sub â€"x]N/GaN HBTs. As a direct band-gap material, GaN has a high radiative recombination rate, which tends to dominate the base current. Therefore, the direct recombination probability is readily recognized as the limiting factor of the current gain. According to the employed semi-empirical model for the recombi.